K6T4008C1B-VB55 is a 4 Mbit (512K × 8) low-power CMOS asynchronous SRAM from Samsung, designed for fast external memory expansion in embedded/industrial electronics. It features three-state TTL-compatible I/O, standard SRAM control signals (CS, OE, WE) and supports battery-backup data retention thanks to a low data retention voltage down to 2.0 V (min.).
Typical applications include legacy CPU/MCU systems, industrial controllers, communication equipment, and repair/replacement of older boards that require 512K×8, 5V SRAM in TSOP-32.
